JSMSEMI-Single FETs, MOSFETs-IRFB4321PBF

Description

Drain to Source Voltage;200V/Gate Charge(Qg);154nC@160V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);101pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.8nF


N-Channel 200V 50A 104W Through Hole TO-220

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);154nC@160V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);101pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$3.48 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);154nC@160V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);101pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.8nF


    N-Channel 200V 50A 104W Through Hole TO-220

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