JSMSEMI-Single FETs, MOSFETs-IXTQ50N25T-JSM

Description

Drain to Source Voltage;250V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Pd - Power Dissipation;400W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.538nF


N-Channel 250V 55A 400W Through Hole TO-247

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Pd - Power Dissipation;400W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$3.30 Excl. VAT

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Pd - Power Dissipation;400W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);55A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.538nF


    N-Channel 250V 55A 400W Through Hole TO-247

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