JSMSEMI-Single FETs, MOSFETs-IXTQ60N20T-JSM

Description

Drain to Source Voltage;220V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.538nF/Output Capacitance(Coss);657pF


N-Channel 220V 60A 500W Through Hole TO-247

Product form

Drain to Source Voltage;220V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;220V/Gate Charge(Qg);244nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;500W/RDS(on);45mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);280pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.538nF/Output Capacitance(Coss);657pF


    N-Channel 220V 60A 500W Through Hole TO-247

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