JSMSEMI-Single FETs, MOSFETs-IXTQ96N20P-JSM

Description

Drain to Source Voltage;220V/Gate Charge(Qg);367nC@10V/Number;1 N-channel/Pd - Power Dissipation;700W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);561pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.784nF


N-Channel 220V 100A 700W Through Hole TO-247

Product form

Drain to Source Voltage;220V/Gate Charge(Qg);367nC@10V/Number;1 N-channel/Pd - Power Dissipation;700W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);561pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;220V/Gate Charge(Qg);367nC@10V/Number;1 N-channel/Pd - Power Dissipation;700W/RDS(on);25mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);561pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;5.784nF


    N-Channel 220V 100A 700W Through Hole TO-247

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