JSMSEMI-Single FETs, MOSFETs-JSM4N50C

Description

Drain to Source Voltage;550V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);2.6Ω@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;560pF


N-Channel 550V 4A 33W Through Hole TO-220

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);2.6Ω@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);2.6Ω@10V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;560pF


    N-Channel 550V 4A 33W Through Hole TO-220

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