JSMSEMI-Single FETs, MOSFETs-SBSC022N04LSATMA1

Description

Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Pd - Power Dissipation;157W/RDS(on);1.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);205A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);1.6nF


40V 205A Surface Mount PDFN-8L(5x6)

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Pd - Power Dissipation;157W/RDS(on);1.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);205A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);1.6nF40V... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Pd - Power Dissipation;157W/RDS(on);1.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);205A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;3.2nF/Output Capacitance(Coss);1.6nF


    40V 205A Surface Mount PDFN-8L(5x6)

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