JSMSEMI-Single FETs, MOSFETs-SHYG011N04LS1C2

Description

Drain to Source Voltage;40V/Gate Charge(Qg);87nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;5.5nF/Output Capacitance(Coss);1.85nF


40V 170A 114W Surface Mount PDFN-8L(5x6)

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);87nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);87nC@10V/Number;1 N-channel/Pd - Power Dissipation;114W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;5.5nF/Output Capacitance(Coss);1.85nF


    40V 170A 114W Surface Mount PDFN-8L(5x6)

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