JSMSEMI-Single FETs, MOSFETs-STD10P6F6-JSM

Description

Drain to Source Voltage;60V/Gate Charge(Qg);4.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20.8W/RDS(on);266mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;530pF


60V 266mΩ@4.5V 1 P-Channel 20.8W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);4.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20.8W/RDS(on);266mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;530pF60V 266mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);4.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20.8W/RDS(on);266mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;530pF


    60V 266mΩ@4.5V 1 P-Channel 20.8W TO-252 Single FETs, MOSFETs RoHS

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