JTD-Single FETs, MOSFETs-JTD2317

Description

Drain to Source Voltage;20V/Gate Charge(Qg);13nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;950pF


P-Channel 20V 7A 1.2W Surface Mount SOT-23-3L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);13nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);13nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;950pF


    P-Channel 20V 7A 1.2W Surface Mount SOT-23-3L

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