JTD-Single FETs, MOSFETs-JTD2317B

Description

Drain to Source Voltage;16V/Gate Charge(Qg);12nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;500pF


P-Channel 16V 6.5A 1.2W Surface Mount SOT-23-3L

Product form

Drain to Source Voltage;16V/Gate Charge(Qg);12nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;16V/Gate Charge(Qg);12nC/Number;1 P-Channel/Pd - Power Dissipation;1.2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);6.5A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;500pF


    P-Channel 16V 6.5A 1.2W Surface Mount SOT-23-3L

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