KIA Semicon Tech-Single FETs, MOSFETs-KNP6140S

Description

Drain to Source Voltage;400V/Gate Charge(Qg);15.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;194.5W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;980pF


N-Channel 400V 11A 194.5W Through Hole TO-220

Product form

Drain to Source Voltage;400V/Gate Charge(Qg);15.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;194.5W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;400V/Gate Charge(Qg);15.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;194.5W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;980pF


    N-Channel 400V 11A 194.5W Through Hole TO-220

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