Leiditech-Single FETs, MOSFETs-FDD3672

Description

Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);28mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2nF


N-Channel 100V 50A 85W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);28mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Pd - Power Dissipation;85W/RDS(on);28mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);250pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2nF


    N-Channel 100V 50A 85W Surface Mount TO-252

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