Lewa Micro-Single FETs, MOSFETs-LWS6008A8

Description

Drain to Source Voltage;60V/Gate Charge(Qg);80nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;5.403nF/Output Capacitance(Coss);941pF


60V 110A 180W Through Hole TO-220AB

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);80nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);80nC@10V/Number;1 P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;5.403nF/Output Capacitance(Coss);941pF


    60V 110A 180W Through Hole TO-220AB

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