LGE-Single Bipolar Transistors-2SC3279-M

Description

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;10V/Current - Collector(Ic);2A/Pd - Power Dissipation;750mW/Operating Temperature;-55℃~+150℃/DC Current Gain;600/Transition frequency(fT);100MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));820mV/Emitter-Base Voltage(Vebo);6V


Bipolar (BJT) Transistor NPN 10V 2000mA 100MHz 750mW Through Hole TO-92

Product form

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;10V/Current - Collector(Ic);2A/Pd - Power Dissipation;750mW/Operating Temperature;-55℃~+150℃/DC Current Gain;600/Transition frequency(fT);100MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));820mV/Emitter-Base Voltage(Vebo);6VBipolar... Read more

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    Description

    type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;10V/Current - Collector(Ic);2A/Pd - Power Dissipation;750mW/Operating Temperature;-55℃~+150℃/DC Current Gain;600/Transition frequency(fT);100MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));820mV/Emitter-Base Voltage(Vebo);6V


    Bipolar (BJT) Transistor NPN 10V 2000mA 100MHz 750mW Through Hole TO-92

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