LGE-Single Bipolar Transistors-BC338-16

Description

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;25V/Current - Collector(Ic);800mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;175/Transition frequency(fT);210MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));700mV/Emitter-Base Voltage(Vebo);5V


Bipolar (BJT) Transistor NPN 25V 800mA 210MHz 625mW Through Hole TO-92-3

Product form

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;25V/Current - Collector(Ic);800mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;175/Transition frequency(fT);210MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));700mV/Emitter-Base Voltage(Vebo);5VBipolar... Read more

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    Description

    type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;25V/Current - Collector(Ic);800mA/Pd - Power Dissipation;625mW/Operating Temperature;-55℃~+150℃/DC Current Gain;175/Transition frequency(fT);210MHz/Current - Collector Cutoff;100nA/Vce Saturation(VCE(sat));700mV/Emitter-Base Voltage(Vebo);5V


    Bipolar (BJT) Transistor NPN 25V 800mA 210MHz 625mW Through Hole TO-92-3

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