LGE-Single FETs, MOSFETs-BSS138DW

Description

Drain to Source Voltage;50V/Gate Charge(Qg);1.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);50pF


N-Channel 50V 200mA 200mW Surface Mount SOT-363

Product form

Drain to Source Voltage;50V/Gate Charge(Qg);1.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;50V/Gate Charge(Qg);1.7nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);3.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;50pF/Output Capacitance(Coss);50pF


    N-Channel 50V 200mA 200mW Surface Mount SOT-363

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