LGE-Single FETs, MOSFETs-BSS84DW

Description

Drain to Source Voltage;50V/Gate Charge(Qg);530pC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;300mW/RDS(on);2.6Ω@10V/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;25.2pF/Output Capacitance(Coss);5.9pF


50V 2.6Ω@10V 2 P-Channel 300mW SOT-363 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;50V/Gate Charge(Qg);530pC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;300mW/RDS(on);2.6Ω@10V/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;25.2pF/Output Capacitance(Coss);5.9pF50V... Read more

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    Description

    Drain to Source Voltage;50V/Gate Charge(Qg);530pC@10V/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;300mW/RDS(on);2.6Ω@10V/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);180mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;25.2pF/Output Capacitance(Coss);5.9pF


    50V 2.6Ω@10V 2 P-Channel 300mW SOT-363 Single FETs, MOSFETs RoHS

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