LITEON-Phototransistors-LTR-4206E

Description

Viewing Angle;20°/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+85℃/Current - Collector(Ic);4.8mA/Pd - Power Dissipation;100mW/Peak Wavelength;940nm


4.8mA 30V 940nm 20° 100nA Through Hole,D=3mm Phototransistors RoHS

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Viewing Angle;20°/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+85℃/Current - Collector(Ic);4.8mA/Pd - Power Dissipation;100mW/Peak Wavelength;940nm4.8mA 30V 940nm 20° 100nA Through Hole,D=3mm... Read more

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    Description

    Viewing Angle;20°/Collector - Emitter Voltage VCEO;30V/Dark Current;100nA/Operating Temperature;-40℃~+85℃/Current - Collector(Ic);4.8mA/Pd - Power Dissipation;100mW/Peak Wavelength;940nm


    4.8mA 30V 940nm 20° 100nA Through Hole,D=3mm Phototransistors RoHS

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