MagnaChip Semicon-Single FETs, MOSFETs-MDD1951RH

Description

Drain to Source Voltage;60V/Gate Charge(Qg);4.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;32.8W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17.9A/Gate Threshold Voltage (Vgs(th));3V


60V 55mΩ@4.5V 1 N-channel 32.8W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);4.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;32.8W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17.9A/Gate Threshold Voltage (Vgs(th));3V60V 55mΩ@4.5V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);4.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;32.8W/RDS(on);55mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17.9A/Gate Threshold Voltage (Vgs(th));3V


    60V 55mΩ@4.5V 1 N-channel 32.8W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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