MATSUKI-Single FETs, MOSFETs-ME2N7002E

Description

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;350mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;43pF


60V 1 N-channel 350mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;350mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;43pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;350mW/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;43pF


    60V 1 N-channel 350mW SOT-23 Single FETs, MOSFETs RoHS

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