MATSUKI-Single FETs, MOSFETs-ME4954-G

Description

Drain to Source Voltage;100V/Number;2 N-Channel/Pd - Power Dissipation;1.3W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.106nF


100V 65mΩ@10V 2 N-Channel 1.3W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Number;2 N-Channel/Pd - Power Dissipation;1.3W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.106nF100V... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Number;2 N-Channel/Pd - Power Dissipation;1.3W/RDS(on);65mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);46pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.106nF


    100V 65mΩ@10V 2 N-Channel 1.3W SOP-8 Single FETs, MOSFETs RoHS

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