MATSUKI-Single FETs, MOSFETs-ME66N04T

Description

Drain to Source Voltage;40V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);172pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.522nF


40V 10.5mΩ@10V 1 N-channel 50W TO-220FB-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);172pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);62nC@10V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);10.5mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);172pF/Current - Continuous Drain(Id);38A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.522nF


    40V 10.5mΩ@10V 1 N-channel 50W TO-220FB-3 Single FETs, MOSFETs RoHS

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