MCC-Single FETs, MOSFETs-2N7002KL3A-TP

Description

Drain to Source Voltage;60V/Gate Charge(Qg);1.22nC@10V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;21pF


60V 2.5Ω@10V 1 N-channel 200mW DFN1006-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);1.22nC@10V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);1.22nC@10V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;21pF


    60V 2.5Ω@10V 1 N-channel 200mW DFN1006-3 Single FETs, MOSFETs RoHS

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