MCC-Single FETs, MOSFETs-MCACL200N04Y-TP

Description

Drain to Source Voltage;40V/Gate Charge(Qg);132nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);1.35mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.1nF


40V 1.35mΩ@10V 1 N-channel 120W DFN5060 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);132nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);1.35mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.1nF40V 1.35mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);132nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);1.35mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;7.1nF


    40V 1.35mΩ@10V 1 N-channel 120W DFN5060 Single FETs, MOSFETs RoHS

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