MCC-Single FETs, MOSFETs-MCB40P10Y-TP

Description

Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;125W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.1nF


100V 56mΩ@10V 1 P-Channel 125W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;125W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.1nF100V 56mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);40nC@10V/Number;1 P-Channel/Pd - Power Dissipation;125W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.1nF


    100V 56mΩ@10V 1 P-Channel 125W D2PAK Single FETs, MOSFETs RoHS

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