MCC-Single FETs, MOSFETs-MCB90N12-TP

Description

Drain to Source Voltage;120V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.514nF


120V 7.2mΩ@10V 1 N-channel 260W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;120V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.514nF120V 7.2mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;120V/Gate Charge(Qg);65nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.514nF


    120V 7.2mΩ@10V 1 N-channel 260W D2PAK Single FETs, MOSFETs RoHS

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