MCC-Single FETs, MOSFETs-MCM1216-TP

Description

Drain to Source Voltage;12V/Gate Charge(Qg);100nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;18W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2.7nF


12V 21mΩ@4.5V 1 P-Channel DFN2020-6J Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);100nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;18W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2.7nF12V 21mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);100nC@8V/Number;1 P-Channel/Pd - Power Dissipation;2.5W;18W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2.7nF


    12V 21mΩ@4.5V 1 P-Channel DFN2020-6J Single FETs, MOSFETs RoHS

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