MCC-Single FETs, MOSFETs-MCP80P06Y-BP

Description

Drain to Source Voltage;60V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;89W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;5.81nF


60V 8.4mΩ@10V 1 P-Channel 89W TO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;89W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;5.81nF60V 8.4mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;89W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;5.81nF


    60V 8.4mΩ@10V 1 P-Channel 89W TO-220AB Single FETs, MOSFETs RoHS

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