MCC-Single FETs, MOSFETs-MCQ12N10Y-TP

Description

Drain to Source Voltage;100V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.135nF


100V 17mΩ@10V 1 N-channel 3.1W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);16nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.135nF


    100V 17mΩ@10V 1 N-channel 3.1W SOP-8 Single FETs, MOSFETs RoHS

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