Drain to Source Voltage;60V/Gate Charge(Qg);71nC@10V/Type;N-Channel/Pd - Power Dissipation;156W/RDS(on);5.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2.5V/Output Capacitance(Coss);815pF60V 5.5mΩ@10V 156W DPAK(TO-252) Single FETs, MOSFETs... Read more

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