MCC-Single FETs, MOSFETs-MSJB17N80-TP

Description

Drain to Source Voltage;800V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.83nF


800V 290mΩ@10V 1 N-channel 181W D2PAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.83nF800V 290mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;181W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.83nF


    800V 290mΩ@10V 1 N-channel 181W D2PAK Single FETs, MOSFETs RoHS

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