MCC-Single FETs, MOSFETs-SI1012-TP

Description

Drain to Source Voltage;20V/Gate Charge(Qg);750nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);250mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;100pF


20V 250mΩ@4.5V 1 N-channel 150mW SOT-523 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);750nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);250mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);750nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);250mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;100pF


    20V 250mΩ@4.5V 1 N-channel 150mW SOT-523 Single FETs, MOSFETs RoHS

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