MCC-Single FETs, MOSFETs-SI2101AHE3-TP

Description

Drain to Source Voltage;20V/Pd - Power Dissipation;300mW/RDS(on);250mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1V


20V 250mΩ@1.8V 300mW SOT-323 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Pd - Power Dissipation;300mW/RDS(on);250mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1V20V 250mΩ@1.8V 300mW SOT-323 Single FETs,... Read more

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    Description

    Drain to Source Voltage;20V/Pd - Power Dissipation;300mW/RDS(on);250mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A/Gate Threshold Voltage (Vgs(th));1V


    20V 250mΩ@1.8V 300mW SOT-323 Single FETs, MOSFETs RoHS

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