MCC-Single FETs, MOSFETs-SI2102AHE3-TP

Description

Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);98mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.1V


20V 98mΩ@2.5V 350mW SOT-323 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);98mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.1V20V 98mΩ@2.5V 350mW SOT-323 Single FETs,... Read more

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    Description

    Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);98mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));1.1V


    20V 98mΩ@2.5V 350mW SOT-323 Single FETs, MOSFETs RoHS

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