MCC-Single FETs, MOSFETs-SI2312B-TP

Description

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;500pF


20V 21mΩ@4.5V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;500pF20V... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;1.25W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);140pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;500pF


    20V 21mΩ@4.5V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

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