MCC-Single FETs, MOSFETs-SI2321-TP

Description

Drain to Source Voltage;20V/Gate Charge(Qg);9.3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;770pF/Output Capacitance(Coss);109pF


P-Channel 20V 2.9A Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);9.3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);9.3nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);30mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;770pF/Output Capacitance(Coss);109pF


    P-Channel 20V 2.9A Surface Mount SOT-23

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