MCC-Single FETs, MOSFETs-SI3400AHE3-TP

Description

Drain to Source Voltage;30V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.155nF


30V 27mΩ@10V 1.3W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.155nF30V 27mΩ@10V 1.3W SOT-23 Single... Read more

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    Description

    Drain to Source Voltage;30V/Type;N-Channel/Pd - Power Dissipation;1.3W/RDS(on);27mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.155nF


    30V 27mΩ@10V 1.3W SOT-23 Single FETs, MOSFETs RoHS

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