Drain to Source Voltage;100V/Type;P-Channel/Pd - Power Dissipation;1.4W/RDS(on);286mΩ@10V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));2V/Output Capacitance(Coss);24pF100V 286mΩ@10V 1.4W SOT-23-3L Single FETs, MOSFETs RoHS Read more

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