MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDD10N65F

Description

Drain to Source Voltage;650V/Gate Charge(Qg);34.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);810mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.8pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.622nF


N-Channel 650V 10A 40W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);34.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);810mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.8pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.622nFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);34.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);810mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);6.8pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.622nF


    N-Channel 650V 10A 40W Through Hole TO-220F

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