MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDD210N40P

Description

Drain to Source Voltage;40V/Gate Charge(Qg);190nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;310W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));2.5V


N-Channel 40V 210A 310W Through Hole TO-220C-3L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);190nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;310W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));2.5VN-Channel 40V 210A 310W... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);190nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;310W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);210A/Gate Threshold Voltage (Vgs(th));2.5V


    N-Channel 40V 210A 310W Through Hole TO-220C-3L

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