MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDD2301

Description

Drain to Source Voltage;20V/Gate Charge(Qg);800pC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);33mΩ@4.5V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);50pF


P-Channel 20V 3.8A 900mW Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);800pC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);33mΩ@4.5V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);800pC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);33mΩ@4.5V/Operating Temperature -;-50℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);50pF


    P-Channel 20V 3.8A 900mW Surface Mount SOT-23

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