MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDD60N04D

Description

Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);5.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.33nF/Output Capacitance(Coss);165pF


40V 5.7mΩ@10V 1 N-channel 114W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);5.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;114W/RDS(on);5.7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.33nF/Output Capacitance(Coss);165pF


    40V 5.7mΩ@10V 1 N-channel 114W TO-252 Single FETs, MOSFETs RoHS

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