MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDDG06R01L

Description

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;330W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF/Current - Continuous Drain(Id);330A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.397nF/Output Capacitance(Coss);3.885nF


60V 1.2mΩ@10V 1 N-channel 330W TOLL Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;330W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF/Current - Continuous Drain(Id);330A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.397nF/Output... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;330W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);203pF/Current - Continuous Drain(Id);330A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.397nF/Output Capacitance(Coss);3.885nF


    60V 1.2mΩ@10V 1 N-channel 330W TOLL Single FETs, MOSFETs RoHS

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