MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-MDDG10R08D

Description

Drain to Source Voltage;100V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);890pF


100V 6.5mΩ@10V 1 N-channel 100W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);890pF


    100V 6.5mΩ@10V 1 N-channel 100W TO-252 Single FETs, MOSFETs RoHS

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