MDD(Microdiode Semiconductor)-Single FETs, MOSFETs-SI2302S

Description

Drain to Source Voltage;20V/Gate Charge(Qg);5.4nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600mW/RDS(on);48mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;160pF/Output Capacitance(Coss);115pF


N-Channel 20V 2.3A Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);5.4nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600mW/RDS(on);48mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);5.4nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;600mW/RDS(on);48mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;160pF/Output Capacitance(Coss);115pF


    N-Channel 20V 2.3A Surface Mount SOT-23

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