MICROCHIP-Single FETs, MOSFETs-APT58M80J

Description

Drain to Source Voltage;800V/Gate Charge(Qg);570nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;960W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);60A/Ciss-Input Capacitance;17.55nF/Output Capacitance(Coss);1.745nF


800V 100mΩ@10V 1 N-channel 960W SOT-227 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);570nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;960W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);60A/Ciss-Input Capacitance;17.55nF/Output Capacitance(Coss);1.745nF800V 100mΩ@10V... Read more

$498.09 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);570nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;960W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);300pF/Current - Continuous Drain(Id);60A/Ciss-Input Capacitance;17.55nF/Output Capacitance(Coss);1.745nF


    800V 100mΩ@10V 1 N-channel 960W SOT-227 Single FETs, MOSFETs RoHS

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