MICROCHIP-Single FETs, MOSFETs-APTM10UM02FAG

Description

Drain to Source Voltage;100V/Gate Charge(Qg);1.36uC@10V/Number;1 N-channel/Pd - Power Dissipation;1.66kW/RDS(on);2.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);570A/Gate Threshold Voltage (Vgs(th));4V


100V 2.5mΩ@10V 1 N-channel 1.66kW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);1.36uC@10V/Number;1 N-channel/Pd - Power Dissipation;1.66kW/RDS(on);2.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);570A/Gate Threshold Voltage (Vgs(th));4V100V 2.5mΩ@10V 1 N-channel... Read more

$984.24 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);1.36uC@10V/Number;1 N-channel/Pd - Power Dissipation;1.66kW/RDS(on);2.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);570A/Gate Threshold Voltage (Vgs(th));4V


    100V 2.5mΩ@10V 1 N-channel 1.66kW Single FETs, MOSFETs RoHS

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