MICROCHIP-Single FETs, MOSFETs-APTM120U10SAG

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);1.1uC@10V/Number;1 N-channel/Pd - Power Dissipation;3.29kW/RDS(on);120mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);116A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;28.9nF


1.2kV 120mΩ@10V 1 N-channel 3.29kW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);1.1uC@10V/Number;1 N-channel/Pd - Power Dissipation;3.29kW/RDS(on);120mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);116A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;28.9nF1.2kV 120mΩ@10V 1... Read more

$1,087.05 Excl. VAT

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);1.1uC@10V/Number;1 N-channel/Pd - Power Dissipation;3.29kW/RDS(on);120mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);116A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;28.9nF


    1.2kV 120mΩ@10V 1 N-channel 3.29kW Single FETs, MOSFETs RoHS

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