MICROCHIP-Single FETs, MOSFETs-LND01K1-G

Description

Drain to Source Voltage;650V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);1.4Ω@0V/Operating Temperature -;-25℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);330mA/Ciss-Input Capacitance;48pF/Output Capacitance(Coss);32pF


N-Channel 650V 330mA 0.36W Surface Mount SOT-23-5

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);1.4Ω@0V/Operating Temperature -;-25℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);330mA/Ciss-Input Capacitance;48pF/Output Capacitance(Coss);32pFN-Channel 650V 330mA... Read more

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;360mW/RDS(on);1.4Ω@0V/Operating Temperature -;-25℃~+125℃/Reverse Transfer Capacitance (Crss@Vds);23pF/Current - Continuous Drain(Id);330mA/Ciss-Input Capacitance;48pF/Output Capacitance(Coss);32pF


    N-Channel 650V 330mA 0.36W Surface Mount SOT-23-5

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