MICROCHIP-Single FETs, MOSFETs-TN0104N3-G-P003

Description

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;70pF


40V 1.8Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;70pF40V 1.8Ω@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;40V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);1.8Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;70pF


    40V 1.8Ω@10V 1 N-channel 1W TO-92-3 Single FETs, MOSFETs RoHS

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